In a groundbreaking development in quantum technology, researchers at TMOS and RMIT University have introduced a new 2D quantum sensing chip using hexagonal boron nitride (hBN). This cutting-edge chip is designed to detect temperature anomalies and magnetic fields in any direction, paving the way for more versatile and cost-effective quantum sensors.
The Limitations of Diamond-Based Sensors
Traditionally, quantum sensing chips have been manufactured using diamond due to its robust nature. However, diamond-based sensors can only detect magnetic fields when aligned in the direction of the field, resulting in significant blind spots when unaligned. To overcome this limitation, multiple sensors at varying alignments are required, complicating operations and reducing versatility. Additionally, the rigid and three-dimensional structure of diamond sensors restricts their ability to closely approach non-smooth samples.
Led by TMOS Associate Investigator Jean-Philippe Tetienne and Chief Investigator Igor Aharonovich, the research teams are spearheading a new quantum sensing platform utilizing hBN crystals. These atomically thin, flexible hBN sheets enable the sensing chips to conform to the shape of the sample under study, allowing them to get closer to the sample compared to diamond sensors. The presence of different defects in hBN leads to various optical phenomena, with a carbon-based defect recently discovered to detect magnetic fields in any direction.
By conducting a Rabi measurement experiment and comparing the results with the well-understood boron vacancy defect in hBN, the researchers identified the new carbon-based defect as a spin half system. This unique half spin nature enables the sensor to detect magnetic fields in all directions. Furthermore, the team found that the carbon defect can be controlled via electrical excitation, similar to the boron vacancy sensor, and can interact with other defects.
The researchers successfully demonstrated a hBN sensing chip that utilizes both spin defects simultaneously to measure magnetic fields and temperature. This accomplishment marks the first magnetic images taken with the unidentified isotropic sensor, highlighting the potential of hBN in quantum sensing applications. Co-first author Sam Scholten emphasizes the importance of optically addressable spin defects in quantum materials, while Co-first author Priya Singh looks forward to exploring the directional independence of hBN sensors in biological systems.
TMOS Chief Investigator Igor Aharonovich underscores the advantages of hBN over diamond in quantum light source applications, citing its thin form factor, room temperature operation, and cost-effectiveness. The researchers believe that low-dimensional materials like hBN offer opportunities to explore new physics due to their extreme anisotropy. Future applications of this quantum sensing technology may include identifying magnetic geological features in the field and conducting radio spectroscopy across a broader band.
The research on hBN quantum sensing chips represents a significant step forward in the field of quantum technology. By leveraging the unique properties of hBN, researchers are pushing the boundaries of quantum sensing capabilities and opening up new possibilities for applications in various industries. Exciting prospects lie ahead as scientists continue to explore and harness the potential of these revolutionary 2D quantum sensors.
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